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NP60N03SUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
V GS = 10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
8
I D = 30 A
10000
6
4
1000
C iss
2
0
Pulsed
100
V GS = 0 V
f = 1 MHz
C oss
C rss
-75
-25
25
75
125
175
225
0.01
0.1
1
10
100
T ch - Channel Temperature - ° C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
50
10
40
V DD = 24 V
15 V
8
100
t d(off)
6V
t d(on)
30
V GS
6
10
t r
t f
20
4
1
V DD = 15 V
V GS = 10 V
R G = 0 Ω
10
0
V DS
I D = 60 A
2
0
0.1
1
10
100
0
20
40
60
80
100
I D - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
100
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
1
0.1
0.01
V GS = 10 V
0V
V GS = 0 V
0.001
Pulsed
10
di/dt = 100 A/ μ s
0
0.5
1
1.5
0.1
1
10
100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D19547EJ1V0DS
I F - Diode Forward Current - A
5
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NP60N04MUG-S18-AY
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NP60N04MUK
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NP60N04NUK-S18-AY
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP60N04VUK
制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
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NP60N04VUK-E2-AY
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